2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs

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The MRF6S21050LR3 and MRF6S21050LSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

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Data Sheet

Application Notes

Product Details

Features

Typical 2–Carrier W–CDMA Performance: V_DD = 28 Volts, I_DQ = 450 mA, Pout = 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain: 16 dB
Drain Efficiency: 27.7%
IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset: –40 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Documentation

Quick reference to our documentation types.

4 documents

^{Data Sheet}
MRF6S21050LR3, MRF6S21050LSR3 2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

PDFRev 2Dec 29, 2008402.3 KBMRF6S21050LEnglish
^{Application Note}
Mounting Method with Mechanical Fasteners for the MRF19090 and Similar Packages Application Note

PDFRev 0Apr 10, 2001477.9 KBAN1923English
^{Package Information}
98ARH98301A, NI-C, 20.0x9.0x3.66, Pitch 0.6, 3 Pins

PDFRev GFeb 29, 201649.3 KBSOT1812-1English
^{Package Information}
98ARH98300A, 465F-01, NI-400S

PDFRev EJan 4, 200329.1 KB98ARH98300AEnglish

Design Resources

Design Files

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5 design files

^Models
MRF6S21050L, MRF6S21050LS RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Jul 22, 2011 00:00:001.5 MBMRF6S21050L_MDL_AWR
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^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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^Models
MRF6S21050L, MRF6S21050LS RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00667.7 KBMRF6S21050L_MDL_ADS
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^Calculators
MRF6S21050LR3, MRF6S21050LSR3 RF Power Electromigration MTTF Calculation Program

XLSRev 2Aug 1, 2007 00:00:0044.0 KBMRF6S21050L_MTTF_CALC
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2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs

Product Details

Features

Documentation

Filter by

MRF6S21050LR3, MRF6S21050LSR3 2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Mounting Method with Mechanical Fasteners for the MRF19090 and Similar Packages Application Note

98ARH98301A, NI-C, 20.0x9.0x3.66, Pitch 0.6, 3 Pins

98ARH98300A, 465F-01, NI-400S

Design Resources

Design Files

Filter by

MRF6S21050L, MRF6S21050LS RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF6S21050L, MRF6S21050LS RF High-Power Model ADS Product Model Design Kit

MRF6S21050LR3, MRF6S21050LSR3 RF Power Electromigration MTTF Calculation Program

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