A2G22S190-01S|Airfast RF Power GaN Transistor | NXP Semiconductors

1800-2200 MHz, 36 W Avg., 48 V Airfast® RF Power GaN Transistor

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 36 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz16.536.27.1–33.8–6
1990 MHz17.337.26.9–33.2–11
2170 MHz16.838.56.7–32.6–7

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N true 0 PSPA2G22S190-01Sen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2G22S190-01S 1800-2200 MHz, 36 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1538789835954742964879 PSP 187.7 KB None None documents None 1538789835954742964879 /docs/en/data-sheet/A2G22S190-01S.pdf 187685 /docs/en/data-sheet/A2G22S190-01S.pdf A2G22S190-01S documents N N 2018-10-05 A2G22S190-01S 1800-2200 MHz, 36 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A2G22S190-01S.pdf /docs/en/data-sheet/A2G22S190-01S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Sep 26, 2018 980000996212993340 Data Sheet Y N A2G22S190-01S 1800-2200 MHz, 36 W Avg, 48 V GaN Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 4 C English 1146694818999692364620 PSP 45.6 KB None None documents None 1146694818999692364620 /docs/en/package-information/98ASA10732D.pdf 45607 /docs/en/package-information/98ASA10732D.pdf SOT1828-1 documents N N 2016-10-31 98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins /docs/en/package-information/98ASA10732D.pdf /docs/en/package-information/98ASA10732D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 19, 2016 302435339416912908 Package Information D N 98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins false 0 A2G22S190-01S downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A2G22S190-01S.pdf 2018-10-05 1538789835954742964879 PSP 1 Sep 26, 2018 Data Sheet A2G22S190-01S 1800-2200 MHz, 36 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A2G22S190-01S.pdf English documents 187685 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2G22S190-01S.pdf A2G22S190-01S 1800-2200 MHz, 36 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A2G22S190-01S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2G22S190-01S 1800-2200 MHz, 36 W Avg, 48 V GaN Data Sheet 187.7 KB A2G22S190-01S N 1538789835954742964879 Package Information 1 /docs/en/package-information/98ASA10732D.pdf 2016-10-31 1146694818999692364620 PSP 4 Jan 19, 2016 Package Information None /docs/en/package-information/98ASA10732D.pdf English documents 45607 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10732D.pdf 98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins /docs/en/package-information/98ASA10732D.pdf documents 302435339416912908 Package Information N en None D pdf C N N 98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins 45.6 KB SOT1828-1 N 1146694818999692364620 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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