1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

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The MRF7S18170HR3 and MRF7S18170HSR3 are designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

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Data Sheet

Product Details

Features

Typical Single–Carrier W–CDMA Performance: V_DD = 28 Volts, I_DQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Power Gain: 17.5 dB

Drain Efficiency: 31%

Device Output Signal PAR: 6.2 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW Peak Tuned Output Power
Pout @ 1 dB Compression Point ≥ 170 Watts CW
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Documentation

Quick reference to our documentation types.

3 documents

^{Data Sheet}
MRF7S18170HR3, MRF7S18170HSR3 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

PDFRev 2Mar 31, 2011956.8 KBMRF7S18170HEnglish
^{Package Information}
98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins

PDFRev FMar 1, 201641.4 KBSOT1789-1English
^{Package Information}
98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins

PDFRev GFeb 4, 201647.3 KBSOT1788-1English

Design Resources

Design Files

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5 design files

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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^Models
MRF7S18170H, MRF7S18170HS RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00158.7 KBMRF7S18170H_MDL_ADS
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MRF7S18170H, MRF7S18170HS RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Jul 22, 2011 00:00:00134.4 KBMRF7S18170H_MDL_AWR
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^Calculators
MRF7S18170HR3, MRF7S18170HSR3 RF Power Electromigration MTTF Calculation Program

XLSRev 1Aug 1, 2007 00:00:0044.0 KBMRF7S18170H_MTTF_CALC
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1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Product Details

Features

Documentation

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MRF7S18170HR3, MRF7S18170HSR3 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins

98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRF7S18170H, MRF7S18170HS RF High-Power Model ADS Product Model Design Kit

MRF7S18170H, MRF7S18170HS RF High-Power Model AWR Product Model Design Kit

MRF7S18170HR3, MRF7S18170HSR3 RF Power Electromigration MTTF Calculation Program

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