A3T19H455W23S|1930-1990 MHz, 81 W Avg, 30 V | NXP Semiconductors

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1930-1990 MHz, 81 W Avg., 30 V Airfast® RF Power LDMOS Transistor

A3T19H455W23S Not Recommended for New Designs
The A3T19H455W23S 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990 MHz.

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

1990 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 30 Vdc, IDQA = 540 mA, VGSB = 0.6 Vdc, Pout = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1930 MHz16.249.68.1–31.0
1960 MHz16.549.48.0–32.1
1990 MHz16.449.17.8–32.6

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Die Technology

A3T19H455W23S
Data Sheet

Not Recommended for New Designs

1930

1990

30

57.3

541

LDMOS

N true 0 PSPA3T19H455W23Sen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1514959408833705739022 PSP 392.9 KB None None documents None 1514959408833705739022 /docs/en/data-sheet/A3T19H455W23S.pdf 392867 /docs/en/data-sheet/A3T19H455W23S.pdf A3T19H455W23S documents N N 2018-01-02 A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet /docs/en/data-sheet/A3T19H455W23S.pdf /docs/en/data-sheet/A3T19H455W23S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Dec 22, 2017 980000996212993340 Data Sheet Y N A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 4 A English ACP-1230S-4L2S 1497055960367704905016 PSP 73.9 KB None None documents None 1497055960367704905016 /docs/en/package-information/98ASA00974D.pdf 73913 /docs/en/package-information/98ASA00974D.pdf SOT1800-4 documents N N 2017-06-09 98ASA00974D, ACP-1230S-4L2S /docs/en/package-information/98ASA00974D.pdf /docs/en/package-information/98ASA00974D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jun 21, 2017 302435339416912908 Package Information D N 98ASA00974D, ACP-1230S-4L2S false 0 A3T19H455W23S downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A3T19H455W23S.pdf 2018-01-02 1514959408833705739022 PSP 1 Dec 22, 2017 Data Sheet A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A3T19H455W23S.pdf English documents 392867 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3T19H455W23S.pdf A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet /docs/en/data-sheet/A3T19H455W23S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3T19H455W23S 1930-1990 MHz, 81 W Avg, 30 V Data Sheet 392.9 KB A3T19H455W23S N 1514959408833705739022 Package Information 1 /docs/en/package-information/98ASA00974D.pdf 2017-06-09 1497055960367704905016 PSP 4 Jun 21, 2017 Package Information ACP-1230S-4L2S None /docs/en/package-information/98ASA00974D.pdf English documents 73913 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00974D.pdf 98ASA00974D, ACP-1230S-4L2S /docs/en/package-information/98ASA00974D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00974D, ACP-1230S-4L2S 73.9 KB SOT1800-4 N 1497055960367704905016 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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