2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

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The MRF6S21100HR3 and MRF6S21100HSR3 are designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio, WLL and TD–SCDMA applications.

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Data Sheet

Product Details

Features

Typical 2–Carrier W–CDMA Performance for V_DD = 28 Volts, I_DQ = 950 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain: 15.9 dB
Drain Efficiency: 27.6%
IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset: –39.5 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Documentation

Quick reference to our documentation types.

3 documents

^{Data Sheet}
MRF6S21100HR3, MRF6S21100HSR3 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

PDFRev 7Jan 31, 2007687.4 KBMRF6S21100HEnglish
^{Package Information}
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

PDFRev HMar 22, 201644.1 KBSOT1792-1English
^{Package Information}
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

PDFRev JMar 22, 201643.5 KBSOT1793-1English

Design Resources

Design Files

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4 design files

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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^Models
RF High-Power Model ADS Model Library: Click the Download button to save.

HTMLRev 0Nov 21, 2008 00:00:00448 BRF_HIGH_POWER_MODELS_ADS_LIBRARY
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^Calculators
MRF6S21100HR3, MRF6S21100HSR3 RF Power Electromigration MTTF Calculation Program

XLSRev 2Aug 6, 2006 00:00:0044.0 KBMRF6S21100H_MTTF_CALC
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2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

Product Details

Features

Documentation

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MRF6S21100HR3, MRF6S21100HSR3 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

RF High-Power Model ADS Model Library: Click the Download button to save.

MRF6S21100HR3, MRF6S21100HSR3 RF Power Electromigration MTTF Calculation Program

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