1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs | NXP Semiconductors

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1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

MD7P19130H
The MD7P19130HR3 and MD7P19130HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

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Product Details

Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 20 dB
    Drain Efficiency: 30%
    Device Output Signal PAR:  6 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –36 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power
  • Pout @ 1 dB Compression Point ≃ 130 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

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