A5G21H605W19N | 2110-2200 MHz, 85 W Avg, 48 V | NXP Semiconductors

2110-2200 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Plastic package
  • RoHS compliant

RF Performance Table

2100 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc)
2110 MHz 16.3 56.1 8.9 –26.3
2140 MHz 16.5 57.6 8.6 –27.3
2170 MHz 16.2 57.1 8.2 –28.9

Buy/Parametrics

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

2110

2200

48

58.3

676

GaN

Documentation

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4 documents

Compact List

Application Note (2)
Data Sheet (1)
Fact Sheet (1)

Design Resources

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