A3G18H500-04S|1805-2200 MHz, 107 W Avg, 48 V | NXP Semiconductors

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1805-2200 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A3G18H500-04S End of Life

The A3G18H500-04S 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1805 MHz15.358.47.1–31.9
1840 MHz15.457.77.0–33.2
1880 MHz15.457.76.7–33.8

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Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

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Peak Power (Typ) (W)

Die Technology

A3G18H500-04S
Data Sheet

End of Life

1805

2200

48

57.3

537

GaN

N true 0 PSPA3G18H500-04Sen 2 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1495768876349719961326 PSP 419.1 KB None None documents None 1495768876349719961326 /docs/en/data-sheet/A3G18H500-04S.pdf 419051 /docs/en/data-sheet/A3G18H500-04S.pdf A3G18H500-04S documents N N 2017-05-25 A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G18H500-04S.pdf /docs/en/data-sheet/A3G18H500-04S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 7, 2020 980000996212993340 Data Sheet Y N A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Data Sheet Package Information Package Information 1 2 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L false 0 A3G18H500-04S downloads en true 1 Y PSP Y Y Data Sheet 1 /docs/en/data-sheet/A3G18H500-04S.pdf 2017-05-25 1495768876349719961326 PSP 1 Aug 7, 2020 Data Sheet A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A3G18H500-04S.pdf English documents 419051 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G18H500-04S.pdf A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G18H500-04S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A3G18H500-04S 1805-2200 MHz, 107 W Avg, 48 V Data Sheet 419.1 KB A3G18H500-04S N 1495768876349719961326 Package Information 1 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 2 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 true Y Products

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