A3G18H500-04S Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
1805
Frequency (Max) (MHz)
2200
Supply Voltage (Typ) (V)
48
ParameterValue
Peak Power (Typ) (dBm)
57.3
Peak Power (Typ) (W)
537
Die Technology
GaN

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
A3G18H500-04SR3(935351522128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
3306.2

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
A3G18H500-04SR3
(935351522128)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
A3G18H500-04SR3
(935351522128)
854129
EAR99

More about A3G18H500-04S

The A3G18H500-04S 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.