This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1930 to 1995 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Part numbers include: A5G19H605W19N.
Typical Doherty Single-Carrier W-CDMA Production Test Fixture Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
| Frequency | Gps (dB) | ηD | Output PAR (dB) | ACPR (dBc) |
| 1930 MHz | 16.3 | 54.3 | 8.9 | –29.2 |
| 1960 MHz | 16.7 | 55.1 | 8.6 | –30.2 |
| 1995 MHz | 17.0 | 55.7 | 8.2 | –31.2 |
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4 design files
Receive the full breakdown. See the product footprint and more in the eCad file.
