A2G22S251-01S|Airfast RF Power GaN Transistor

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The A2G22S251-01SR3 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1805 to 2200 MHz.

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Data Sheet

Product Details

Features

High Terminal Impedances for Optimal Broadband Performance
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant

Part numbers include: A2G22S251-01S.

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQ = 200 mA, Pout = 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
1805 MHz	17.4	33.5	7.0	–34.7	–14
1990 MHz	17.3	34.3	7.1	–35.1	–11
2170 MHz	17.7	37.5	6.8	–33.2	–12

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Documentation

Quick reference to our documentation types.

2 documents

^{Data Sheet}
A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

PDFRev 0May 16, 2016298.4 KBA2G22S251-01SEnglish
^{Package Information}
98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins

PDFRev CJan 19, 201645.6 KBSOT1828-1English

Design Resources

Design Files

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1-5 of 6 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019 00:00:00291.5 KBA2G22S251_01S_MDL_ADS
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^Models
A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 2016 00:00:00739.5 KBA2G22S251_01S_MDL_AWR
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RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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A2G22S251-01S S-Parameters

S2PRev 0May 16, 2016 00:00:00238.4 KBA2G22S251-01S_SP
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^{Printed Circuit Boards and Schematics}
A2G22S251-01S 2000 MHz PCB DXF file

ZIPRev 2May 16, 2016 00:00:00100.4 KBA2G22S251-01S_2000_PCB
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1805-2200 MHz, 48 W Avg., 48 V Airfast^® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2000 MHz

Buy/Parametrics

Documentation

Filter by

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins

Design Resources

Design Files

Filter by

A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2G22S251-01S S-Parameters

A2G22S251-01S 2000 MHz PCB DXF file

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Support

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1805-2200 MHz, 48 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2000 MHz

Buy/Parametrics

Documentation

Filter by

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins

Design Resources

Design Files

Filter by

A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2G22S251-01S S-Parameters

A2G22S251-01S 2000 MHz PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

1805-2200 MHz, 48 W Avg., 48 V Airfast^® RF Power GaN Transistor