A2G22S251-01S|Airfast RF Power GaN Transistor

Product Details

Features

High Terminal Impedances for Optimal Broadband Performance
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQ = 200 mA, Pout = 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
1805 MHz	17.4	33.5	7.0	–34.7	–14
1990 MHz	17.3	34.3	7.1	–35.1	–11
2170 MHz	17.7	37.5	6.8	–33.2	–12

Buy/Parametrics

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English

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V Airfast<sup>®</sup> RF power GaN transistor for cellular base stations

1463458794028707039215 PSP

298.4 KB

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documents

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2016-10-31

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

/docs/en/data-sheet/A2G22S251-01S.pdf /docs/en/data-sheet/A2G22S251-01S.pdf

Data Sheet

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A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

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1146694818999692364620 PSP

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98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins

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/docs/en/data-sheet/A2G22S251-01S.pdf

2016-10-31

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May 16, 2016

Data Sheet

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V Airfast<sup>®</sup> RF power GaN transistor for cellular base stations

None

/docs/en/data-sheet/A2G22S251-01S.pdf

English

documents

298398

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2022-12-07

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/docs/en/data-sheet/A2G22S251-01S.pdf

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

/docs/en/data-sheet/A2G22S251-01S.pdf

documents

980000996212993340

Data Sheet

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A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

298.4 KB

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N

1463458794028707039215

Package Information

1

/docs/en/package-information/98ASA10732D.pdf

2016-10-31

1146694818999692364620 PSP 2

Jan 19, 2016

Package Information

None

/docs/en/package-information/98ASA10732D.pdf

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documents

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2022-12-07

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98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins

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Package Information

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45.6 KB

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Documentation

Quick reference to our documentation types.

2 documents

Compact List

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet[A2G22S251-01S]

PDFMay 16, 2016Rev 0

98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins[SOT1828-1]

PDFJan 19, 2016Rev C

Design Resources

Design Files

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1-5of 6 design files

Models
A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019291.5 KBA2G22S251_01S_MDL_ADS

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A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 2016739.5 KBA2G22S251_01S_MDL_AWR

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A2G22S251-01S S-Parameters

S2PRev 0May 16, 2016238.4 KBA2G22S251-01S_SP

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Printed Circuit Boards and Schematics
A2G22S251-01S 2000 MHz PCB DXF file

ZIPRev 2May 16, 2016100.4 KBA2G22S251-01S_2000_PCB

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1805-2200 MHz, 48 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2000 MHz

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet[A2G22S251-01S]

Package Information (1)

98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins[SOT1828-1]

Filter by

Data Sheet (1)

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet[A2G22S251-01S]

Package Information (1)

98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins[SOT1828-1]

Design Resources

Design Files

Filter by

A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2G22S251-01S S-Parameters

A2G22S251-01S 2000 MHz PCB DXF file

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Filter By

A2G22S251-01S RF High-Power Model ADS Product Model Design Kit

A2G22S251-01S RF High-Power Model AWR Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2G22S251-01S S-Parameters

A2G22S251-01S 2000 MHz PCB DXF file

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1805-2200 MHz, 48 W Avg., 48 V Airfast^® RF Power GaN Transistor