A2G22S251-01S|Airfast RF Power GaN Transistor | NXP Semiconductors

1805-2200 MHz, 48 W Avg., 48 V Airfast® RF Power GaN Transistor

Package/Quality

Quality Information

Part/Package Material Declaration Safe Assure Functional Safety Peak Package Body Temperature(PPT)(℃) Maximum Time at Peak Temperature(s)
Lead Free Soldering Lead Free Soldering