A2T18S166W12S|1805-1995 MHz, 38 W Avg, 28 V | NXP Semiconductors

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1805-1995 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T18S166W12S End of Life
The A2T18S166W12S 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.

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Features

  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Optimized for Doherty applications
  • RoHS compliant

RF Performance Tables

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
1805 MHz18.035.36.9–34.5–18
1840 MHz18.134.46.8–34.7–19
1880 MHz17.634.26.7–34.3–12

1900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)		 IRL
(dB)
1930 MHz17.831.26.8–34.6–16
1960 MHz18.331.76.8–34.4–22
1995 MHz18.632.86.8–34.0–14

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Die Technology

A2T18S166W12S
Data Sheet

End of Life

1805

1995

28

LDMOS

N true 0 PSPA2T18S166W12Sen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1527131496222711791469 PSP 509.2 KB None None documents None 1527131496222711791469 /docs/en/data-sheet/A2T18S166W12S.pdf 509233 /docs/en/data-sheet/A2T18S166W12S.pdf A2T18S166W12S documents N N 2018-05-23 A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T18S166W12S.pdf /docs/en/data-sheet/A2T18S166W12S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Apr 30, 2018 980000996212993340 Data Sheet Y N A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 4 B English 98ASA00517D, NI-780S-2L2L 1355503706234712598741 PSP 53.8 KB None None documents None 1355503706234712598741 /docs/en/package-information/98ASA00517D.pdf 53841 /docs/en/package-information/98ASA00517D.pdf SOT1785-1 documents N N 2016-10-31 98ASA00517D, NI-780S-2L2L, 20.57x9.78x3.81, Pitch 24.28, 5 Pins /docs/en/package-information/98ASA00517D.pdf /docs/en/package-information/98ASA00517D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 24, 2016 302435339416912908 Package Information D N 98ASA00517D, NI-780S-2L2L, 20.57x9.78x3.81, Pitch 24.28, 5 Pins false 0 A2T18S166W12S downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A2T18S166W12S.pdf 2018-05-23 1527131496222711791469 PSP 1 Apr 30, 2018 Data Sheet A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T18S166W12S.pdf English documents 509233 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T18S166W12S.pdf A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Data Sheet /docs/en/data-sheet/A2T18S166W12S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2T18S166W12S 1805-1995 MHz, 38 W Avg, 28 V Data Sheet 509.2 KB A2T18S166W12S N 1527131496222711791469 Package Information 1 /docs/en/package-information/98ASA00517D.pdf 2016-10-31 1355503706234712598741 PSP 4 Feb 24, 2016 Package Information 98ASA00517D, NI-780S-2L2L None /docs/en/package-information/98ASA00517D.pdf English documents 53841 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00517D.pdf 98ASA00517D, NI-780S-2L2L, 20.57x9.78x3.81, Pitch 24.28, 5 Pins /docs/en/package-information/98ASA00517D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA00517D, NI-780S-2L2L, 20.57x9.78x3.81, Pitch 24.28, 5 Pins 53.8 KB SOT1785-1 N 1355503706234712598741 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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