A2T18H100-25S|1805-1995 MHz, 18 W Avg, 28 V | NXP Semiconductors

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1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T18H100-25S End of Life
The A2T18H100-25SR3 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.

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Features

  • Advanced High Performance In-Package Doherty
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13-inch Reel.

RF Performance Tables

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 230 mA, VGSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1805 MHz18.150.27.7–31.0
1840 MHz18.249.67.8–33.0
1880 MHz18.149.87.9–34.4

1900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 210 mA, VGSB = 0.3 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1930 MHz18.851.08.1–31.3
1960 MHz18.750.27.9–32.7
1990 MHz18.650.17.8–33.3

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Die Technology

A2T18H100-25S
Data Sheet

End of Life

1805

1995

28

50.5

112

LDMOS

N true 0 PSPA2T18H100-25Sen 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2T18H100-25S 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering frequencies from 1805 to 1995 MHz. 1415052610408713175763 PSP 755.3 KB None None documents None 1415052610408713175763 /docs/en/data-sheet/A2T18H100-25S.pdf 755294 /docs/en/data-sheet/A2T18H100-25S.pdf A2T18H100-25S documents N N 2016-10-31 A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet /docs/en/data-sheet/A2T18H100-25S.pdf /docs/en/data-sheet/A2T18H100-25S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Oct 31, 2014 980000996212993340 Data Sheet Y N A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 3 A English 1362954192319715956460 PSP 56.1 KB None None documents None 1362954192319715956460 /docs/en/package-information/98ASA00406D.pdf 56071 /docs/en/package-information/98ASA00406D.pdf SOT1797-1 documents N N 2016-10-31 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins /docs/en/package-information/98ASA00406D.pdf /docs/en/package-information/98ASA00406D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins false 0 A2T18H100-25S downloads en true 1 Y PSP Y Y Data Sheet 1 /docs/en/data-sheet/A2T18H100-25S.pdf 2016-10-31 1415052610408713175763 PSP 1 Oct 31, 2014 Data Sheet A2T18H100-25S 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering frequencies from 1805 to 1995 MHz. None /docs/en/data-sheet/A2T18H100-25S.pdf English documents 755294 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T18H100-25S.pdf A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet /docs/en/data-sheet/A2T18H100-25S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistor Data Sheet 755.3 KB A2T18H100-25S N 1415052610408713175763 Package Information 1 /docs/en/package-information/98ASA00406D.pdf 2016-10-31 1362954192319715956460 PSP 3 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00406D.pdf English documents 56071 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00406D.pdf 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins /docs/en/package-information/98ASA00406D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00406D, NI-C, 20.57x9.78x3.81, Pitch 8.89, 9 Pins 56.1 KB SOT1797-1 N 1362954192319715956460 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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