AFT20S015N|100-3600 MHz, 1.5 W Avg., 28 V

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The AFT20S015NR1 and AFT20S015GNR1 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 100 to 3600 MHz.

See product image

Data Sheet

Application Notes

Product Details

Features

Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

Part numbers include: AFT20S015GN, AFT20S015N.

RF Performance Tables

2100 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
2110 MHz	17.5	22.0	8.9	–43.0	–11
2140 MHz	17.6	22.0	9.0	–44.0	–12
2170 MHz	17.6	22.0	9.1	–44.0	–14

1800 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
1805 MHz	18.0	21.0	9.2	–42.0	–11
1840 MHz	18.1	22.0	9.2	–44.0	–10
1880 MHz	18.0	22.0	9.1	–45.0	–10

2600 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 132 mA, Pout = 2.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
2300 MHz	15.7	23.0	9.0	–45.0	–6
2400 MHz	16.0	23.0	8.8	–44.0	–7
2500 MHz	15.8	23.0	8.6	–43.0	–6
2600 MHz	15.8	21.0	8.5	–43.0	–7
2700 MHz	15.5	20.0	8.4	–42.0	–8

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

5 documents

^{Data Sheet}
AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Data Sheet

PDFRev 2Apr 17, 2020754.7 KBAFT20S015NEnglish
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

PDFRev DMar 30, 201686.0 KBSOT1731-1English
^{Package Information}
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English

Design Resources

Design Files

Quick reference to our design files types.

1-5 of 9 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
AFT20S015N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00305.4 KBAFT20S015N_MDL_ADS
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RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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AFT20S015N RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Apr 2, 2015 00:00:00826.6 KBAFT20S015N_MDL_AWR
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^Models
AFT20S015NR1, AFT20S015GNR1 S-Parameters

S2PRev 0Apr 16, 2013 00:00:0048.0 KBAFT20S015N_SP
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^{Printed Circuit Boards and Schematics}
AFT20S015N 2600 MHz PCB DXF file

ZIPRev 0Apr 19, 2013 00:00:00309.6 KBAFT20S015N_2600_PCB
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AFT20S015N 1800 MHz PCB DXF file

ZIPRev 2Apr 19, 2013 00:00:00470.4 KBAFT20S015N_1800_PCB
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AFT20S015N 2100 MHz Standard Frequency PCB DXF file

ZIPRev 2Apr 19, 2013 00:00:00471.7 KBAFT20S015N_2100_STD_PCB
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^Calculators
AFT20S015N, AFT20S015GN RF Power Electromigration MTTF Calculation Program

XLSXRev 0Apr 29, 2013 00:00:0032.3 KBAFT20S015N_MTTF_CALC
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Show All

100-3600 MHz 1.5 W Avg., 28 V Airfast^® RF Power LDMOS Transistors

Product Details

Features

RF Performance Tables

2100 MHz

1800 MHz

2600 MHz

Buy/Parametrics

Documentation

Filter by

AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Data Sheet

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

Design Resources

Design Files

Filter by

AFT20S015N RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFT20S015N RF High-Power Model AWR Product Model Design Kit

AFT20S015NR1, AFT20S015GNR1 S-Parameters

AFT20S015N 2600 MHz PCB DXF file

AFT20S015N 1800 MHz PCB DXF file

AFT20S015N 2100 MHz Standard Frequency PCB DXF file

AFT20S015N, AFT20S015GN RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

100-3600 MHz 1.5 W Avg., 28 V Airfast® RF Power LDMOS Transistors

Product Details

Features

RF Performance Tables

2100 MHz

1800 MHz

2600 MHz

Buy/Parametrics

Documentation

Filter by

AFT20S015N 1805-2700 MHz, 1.5 W Avg., 28 V Data Sheet

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

Design Resources

Design Files

Filter by

AFT20S015N RF High-Power Model ADS Product Model Design Kit

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFT20S015N RF High-Power Model AWR Product Model Design Kit

AFT20S015NR1, AFT20S015GNR1 S-Parameters

AFT20S015N 2600 MHz PCB DXF file

AFT20S015N 1800 MHz PCB DXF file

AFT20S015N 2100 MHz Standard Frequency PCB DXF file

AFT20S015N, AFT20S015GN RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

100-3600 MHz 1.5 W Avg., 28 V Airfast^® RF Power LDMOS Transistors