A2V09H400-04S|720-960 MHz, 102 W Avg, 48 V

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This 102 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Greater negative gate--source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

Part numbers include: A2V09H400-04S.

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 750 mA, V_GSB = 0.8 Vdc, P_out = 102 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	18.7	53.5	7.2	–29.5
940 MHz	18.9	54.0	7.0	–29.2
960 MHz	18.5	53.4	6.8	–28.8

700 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 46 Vdc, I_DQA = 300 mA, V_GSB = 2.3 Vdc, P_out = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	P3dB (dBm)	ACPR (dBc)
758 MHz	18.3	56.1	7.9	57.4	–29.7
780 MHz	18.7	55.8	8.0	57.5	–31.0
803 MHz	18.8	55.5	8.0	57.5	–33.0

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

^{Data Sheet}
A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Data Sheet

PDFRev 2Feb 18, 2021221.0 KBA2V09H400-04SEnglish
^{Application Note}
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDFRev 1Feb 24, 2011664.6 KBAN1908English
^{Package Information}
NI-780S-4L

PDFRev CAug 15, 201642.9 KB98ASA10718DEnglish

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
A2V09H400-04S Carrier S-Parameters

S2PRev 0Sep 5, 2019 00:00:0010.8 KBA2V09H400-04S-Carrier
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^Models
A2V09H400-04S Peaking Class C S-Parameters

S2PRev 0Sep 5, 2019 00:00:0010.8 KBA2V09H400-04S-Peaking-Class-C
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^Models
A2V09H400-04S Peaking Class AB S-Parameters

S2PRev 0Sep 5, 2019 00:00:0010.8 KBA2V09H400-04S-Peaking-Class-AB
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^{Printed Circuit Boards and Schematics}
A2V09H400-04S 900 MHz PCB DXF file

ZIPRev 0Sep 5, 2019 16:30:0067.7 KBA2V09H400-04S-900-PCB
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^{Design Files - miscellaneous}
A2V09H400-04S 920-960 MHz Design Files

RARRev 0Nov 10, 2021 14:29:00634.4 KBA2V09H400-04S-DESIGN-FILES
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A2V09H400-04S 720-960 MHz, 102 W Avg., 48 V Airfast^® RF Power LDMOS Transistor