A2T08VD020N|728-960 MHz, 2 W Avg, 48 V | NXP Semiconductors

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728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2T08VD020N Active
The A2T08VD020NT1 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.

See product image

Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 ACPR
(dBc)
920 MHz19.321.3–43.4
940 MHz19.321.5–43.8
960 MHz19.121.1–43.9

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 ACPR
(dBc)
728 MHz19.218.9–42.3
748 MHz19.219.2–42.6
768 MHz18.918.7–42.6

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N true 0 PSPA2T08VD020Nen 3 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1453274486196704010253 PSP 377.7 KB None None documents None 1453274486196704010253 /docs/en/data-sheet/A2T08VD020N.pdf 377680 /docs/en/data-sheet/A2T08VD020N.pdf A2T08VD020N documents N N 2017-05-12 A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2T08VD020N.pdf /docs/en/data-sheet/A2T08VD020N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 18, 2022 980000996212993340 Data Sheet Y N A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet Application Note Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note Package Information Package Information 1 3 B English 1894-02, 24 Terminal Thermally Enhanced Power Quad Flat Non-leaded (PQFN 8x8) 1159978986098697260288 PSP 44.4 KB None None documents None 1159978986098697260288 /docs/en/package-information/98ASA10760D.pdf 44356 /docs/en/package-information/98ASA10760D.pdf SOT1664-1 documents N N 2016-10-31 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins /docs/en/package-information/98ASA10760D.pdf /docs/en/package-information/98ASA10760D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 21, 2016 302435339416912908 Package Information D N 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins false 0 A2T08VD020N downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 Data Sheet 1 /docs/en/data-sheet/A2T08VD020N.pdf 2017-05-12 1453274486196704010253 PSP 1 May 18, 2022 Data Sheet A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2T08VD020N.pdf English documents 377680 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2T08VD020N.pdf A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2T08VD020N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet 377.7 KB A2T08VD020N N 1453274486196704010253 Package Information 1 /docs/en/package-information/98ASA10760D.pdf 2016-10-31 1159978986098697260288 PSP 3 Mar 21, 2016 Package Information 1894-02, 24 Terminal Thermally Enhanced Power Quad Flat Non-leaded (PQFN 8x8) None /docs/en/package-information/98ASA10760D.pdf English documents 44356 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10760D.pdf 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins /docs/en/package-information/98ASA10760D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins 44.4 KB SOT1664-1 N 1159978986098697260288 true Y Products

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