This 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 717 to 850 MHz.
This part is characterized and performance is guaranteed for applications operating in the 717 to 850 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Part numbers include: A5G07H800W19N.
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
| 758 MHz | 19.7 | 61.2 | 8.9 | -26.5 |
| 803 MHz | 19.3 | 60.0 | 9.1 | -29.3 |
| 821 MHz | 18.8 | 59.8 | 9.0 | -30.0 |
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2 design files
Receive the full breakdown. See the product footprint and more in the eCad file.
