A2V09H400-04N|720-960 MHz, 197 W Avg, 48 V | NXP Semiconductors

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720-960 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2V09H400-04N Active
The A2V09H400-04NR3 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 688 mA, VGSB = 0.6 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
733 MHz17.556.37.2–31.3
780 MHz18.055.87.2–36.4
821 MHz17.455.66.9–35.0

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N true 0 PSPA2V09H400-04Nen 5 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1479769044467709721118 PSP 398.6 KB None None documents None 1479769044467709721118 /docs/en/data-sheet/A2V09H400-04N.pdf 398583 /docs/en/data-sheet/A2V09H400-04N.pdf A2V09H400-04N documents N N 2016-11-21 A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V09H400-04N.pdf /docs/en/data-sheet/A2V09H400-04N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 10, 2017 980000996212993340 Data Sheet Y N A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 4 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 5 B English 98ASA10833D, OM-780-4L Straight Lead 1320204697071704615089 PSP 69.8 KB None None documents None 1320204697071704615089 /docs/en/package-information/98ASA10833D.pdf 69766 /docs/en/package-information/98ASA10833D.pdf SOT1818-4 documents N N 2016-10-31 98ASA10833D /docs/en/package-information/98ASA10833D.pdf /docs/en/package-information/98ASA10833D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASA10833D false 0 A2V09H400-04N downloads en true 1 Y PSP Y Y Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/A2V09H400-04N.pdf 2016-11-21 1479769044467709721118 PSP 1 Mar 10, 2017 Data Sheet A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2V09H400-04N.pdf English documents 398583 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2V09H400-04N.pdf A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V09H400-04N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A2V09H400-04N 720-960 MHz, 107 W Avg, 48 V Data Sheet 398.6 KB A2V09H400-04N N 1479769044467709721118 Package Information 1 /docs/en/package-information/98ASA10833D.pdf 2016-10-31 1320204697071704615089 PSP 5 Mar 22, 2016 Package Information 98ASA10833D, OM-780-4L Straight Lead None /docs/en/package-information/98ASA10833D.pdf English documents 69766 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10833D.pdf 98ASA10833D /docs/en/package-information/98ASA10833D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10833D 69.8 KB SOT1818-4 N 1320204697071704615089 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 4 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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