A3V07H600-42N 616-870 MHz, 112 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A3V07H600-42N 616-870 MHz, 112 W Avg., 48 V Airfast® RF Power LDMOS Transistor | NXP Semiconductors

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This A3V07H600-42N 112 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 616 to 870 MHz.

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Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Table

717-768 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 900 mA, V_GSB = V_GSC = 1.0 Vdc⁽¹⁾, P_out = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽²⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
717 MHz	16.9	52.8	8.0	–30.7
742 MHz	17.0	51.3	8.1	–32.0
768 MHz	17.1	51.8	7.7	–32.4

616-870 MHz⁽³⁾

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 900 mA, V_GSB = V_GSC = 1.1 Vdc⁽¹⁾, P_out = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
616 MHz	18.2	45.4	7.7	–32.4
632 MHz	18.5	47.1	7.7	–31.9
650 MHz	18.7	47.7	7.8	–31.0
717 MHz	19.1	44.4	8.3	–36.2
732 MHz	19.1	43.4	8.5	–38.3
750 MHz	19.2	42.9	8.5	–39.5
840 MHz	19.1	44.9	8.1	–33.3
850 MHz	18.7	43.9	8.1	–32.7
860 MHz	18.4	42.8	8.0	–32.6
870 MHz	18.0	41.7	7.8	–32.4

1. V_GSB = V_GSC = peaking bias voltage.
2. All data measured in fixture with device soldered to heatsink.
3. Fixture designed with a wideband match.

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Data Sheet[A3V07H600-42N]

PDFAug 6, 2020Rev 0

98ASA01453D[sot2025-1]

PDFJul 12, 2020Rev A

Design Resources

Design Files

Quick reference to our design files types.

4 design files

Models
A3V07H600-42N Carrier S-Parameters

S2PRev 0Aug 6, 202021.0 KBA3V07H600-42N-CARRIER

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Models
A3V07H600-42N Peaking Class AB S-Parameters

S2PRev 0Aug 6, 202015.8 KBA3V07H600-42N-PEAKING-CLASS-AB

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Models
A3V07H600-42N Peaking Class C S-Parameters

S2PRev 0Aug 6, 202015.9 KBA3V07H600-42N-PEAKING-CLASS-C

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Printed Circuit Boards and Schematics
A3V07H600-42N 700 MHz PCB DXF file

DXFRev NB1Aug 6, 20201.1 MBA3V07H600-42N-700-PCB

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A3V07H600-42N 616-870 MHz, 112 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Table

717-768 MHz

616-870 MHz(3)

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Data Sheet[A3V07H600-42N]

Package Information (1)

98ASA01453D[sot2025-1]

Filter by

Application Note (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Data Sheet[A3V07H600-42N]

Package Information (1)

98ASA01453D[sot2025-1]

Design Resources

Design Files

Filter by

A3V07H600-42N Carrier S-Parameters

A3V07H600-42N Peaking Class AB S-Parameters

A3V07H600-42N Peaking Class C S-Parameters

A3V07H600-42N 700 MHz PCB DXF file

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Filter By

A3V07H600-42N Carrier S-Parameters

A3V07H600-42N Peaking Class AB S-Parameters

A3V07H600-42N Peaking Class C S-Parameters

A3V07H600-42N 700 MHz PCB DXF file

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A3V07H600-42N 616-870 MHz, 112 W Avg., 48 V Airfast^® RF Power LDMOS Transistor

616-870 MHz⁽³⁾