AFV09P350-04N|720-960 MHz, 100 W Avg, 48 V

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The AFV09P350-04NR3 and AFV09P350-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Data Sheet

Application Notes

Product Details

Features

Production Tested in a Symmetrical Doherty Configuration
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 860 mA, V_GSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	19.5	48.5	7.2	–29.2
940 MHz	19.5	49.5	7.1	–32.0
960 MHz	19.2	48.0	7.0	–35.7

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Documentation

Quick reference to our documentation types.

1-5 of 7 documents

^{Data Sheet}
AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors – Data Sheet

PDFRev 0Jan 13, 2014512.1 KBAFV09P350-04NEnglish
^{Application Note}
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
^{Application Note}
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

PDFRev 3May 13, 2009910.7 KBAN1907English
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins

PDFRev EMar 22, 201676.8 KBSOT1825-1English
^{Package Information}
98ASA10833D

PDFRev BMar 22, 201669.8 KBSOT1818-4English

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Design Resources

Design Files

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1-5 of 8 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00785 BRF_HIGH_POWER_MODEL_ADS_KIT
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016 00:00:00802 BRF_HIGH_POWER_MODEL_AWR_KIT
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AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 860 mA S-Parameters

S2PRev 0Jan 13, 2014 00:00:0019.2 KBAFV09P350_04N_PEAKING_860MA_SP
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AFV09P350-04NR3, AFV09P350-04GNR3 Carrier 860 mA S-Parameters

S2PRev 0Jan 13, 2014 00:00:0019.2 KBAFV09P350_04N_CARRIER_860MA_SP
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AFV09P350-04N RF High-Power Model AWR Product Model Design Kit

ZIPRev 1Apr 2, 2015 00:00:00466.3 KBAFV09P350_04N_MDL_AWR
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AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 0.9 Vgs S-Parameters

S2PRev 0Jan 13, 2014 00:00:0019.2 KBAFV09P350_04N_PEAKING_0P9VGS_SP
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AFV09P350-04N RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019 00:00:00170.9 KBAFV09P350_04N_MDL_ADS
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^Calculators
AFV09P350-04NR3, AFV09P350-04GNR3 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jan 13, 2014 00:00:0034.2 KBAFV09P350_04N_MTTF_CALC
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720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors

Product Details

Features

RF Performance Table

900 MHz

Buy/Parametrics

Documentation

Filter by

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors – Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins

98ASA10833D

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 860 mA S-Parameters

AFV09P350-04NR3, AFV09P350-04GNR3 Carrier 860 mA S-Parameters

AFV09P350-04N RF High-Power Model AWR Product Model Design Kit

AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 0.9 Vgs S-Parameters

AFV09P350-04N RF High-Power Model ADS Product Model Design Kit

AFV09P350-04NR3, AFV09P350-04GNR3 RF Power Electromigration MTTF Calculation Program

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Support

What do you need help with?

Suggested Links

720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors

Product Details

Features

RF Performance Table

900 MHz

Buy/Parametrics

Documentation

Filter by

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors – Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins

98ASA10833D

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 860 mA S-Parameters

AFV09P350-04NR3, AFV09P350-04GNR3 Carrier 860 mA S-Parameters

AFV09P350-04N RF High-Power Model AWR Product Model Design Kit

AFV09P350-04NR3, AFV09P350-04GNR3 Peaking 0.9 Vgs S-Parameters

AFV09P350-04N RF High-Power Model ADS Product Model Design Kit

AFV09P350-04NR3, AFV09P350-04GNR3 RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors

AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast^® RF Power LDMOS Transistors – Data Sheet