A2V07H525-04N|595-851 MHz, 120 W Avg, 48 V | NXP Semiconductors

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595-851 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2V07H525-04N End of Life
The A2V07H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 595 to 851 MHz.

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Features

  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Tables

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 0.5 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
595 MHz17.854.76.8–27.5
623 MHz17.556.97.2–29.2
652 MHz17.353.46.8–27.2

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 1.25 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
758 MHz18.453.07.1–31.1
780 MHz18.354.17.1–31.1
803 MHz17.554.16.7–30.6

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N true 0 PSPA2V07H525-04Nen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1500947669918722604400 PSP 1.1 MB None None documents None 1500947669918722604400 /docs/en/data-sheet/A2V07H525-04N.pdf 1076156 /docs/en/data-sheet/A2V07H525-04N.pdf A2V07H525-04N documents N N 2017-07-24 A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V07H525-04N.pdf /docs/en/data-sheet/A2V07H525-04N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 20, 2017 980000996212993340 Data Sheet Y N A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet Application Note Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 4 C English 1423774835794718892944 PSP 72.8 KB None None documents None 1423774835794718892944 /docs/en/package-information/98ASA00506D.pdf 72759 /docs/en/package-information/98ASA00506D.pdf SOT1816-1 documents N N 2016-10-31 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00506D.pdf /docs/en/package-information/98ASA00506D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins false 0 A2V07H525-04N downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/A2V07H525-04N.pdf 2017-07-24 1500947669918722604400 PSP 1 Jul 20, 2017 Data Sheet A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2V07H525-04N.pdf English documents 1076156 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2V07H525-04N.pdf A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V07H525-04N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet 1.1 MB A2V07H525-04N N 1500947669918722604400 Package Information 1 /docs/en/package-information/98ASA00506D.pdf 2016-10-31 1423774835794718892944 PSP 4 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00506D.pdf English documents 72759 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00506D.pdf 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00506D.pdf documents 302435339416912908 Package Information N en None D pdf C N N 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins 72.8 KB SOT1816-1 N 1423774835794718892944 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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