This 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 865 to 960 MHz.
This part is characterized and performance is guaranteed for applications operating in the 865 to 960 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Part numbers include: A5G08H800W19N.
Typical Doherty Single−Carrier W−CDMA Production Test Fixture Performance: VDD = 50 Vdc, IDQA = 350 mA, VGSB = –5.0 Vdc, Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
| Frequency | Gps (dB) | ηD (%) | Output PAR (dB) | ACPR (dBc) |
| 865 MHz | 19.3 | 60.5 | 8.8 | –28.0 |
| 913 MHz | 19.5 | 59.9 | 8.6 | –28.8 |
| 960 MHz | 19.1 | 58.7 | 8.3 | –30.5 |
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3 design files
Receive the full breakdown. See the product footprint and more in the eCad file.
