A2V07H400-04N|420-851 MHz, 107 W Avg, 48 V | NXP Semiconductors

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420-851 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2V07H400-04N Active
The A2V07H400-04N 107 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 420 to 851 MHz.

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 1.3 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
595 MHz19.458.46.8–29.8
623 MHz19.959.47.1–30.1
652 MHz19.857.27.1–32.2

460 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.5 Vdc, Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
460 MHz17.658.77.1–29.7
465 MHz17.758.77.1–30.6
470 MHz17.957.17.0–32.2

420 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 500 mA, VGSB = 1.6 Vdc, Pout = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
420 MHz18.853.37.0–27.0
423 MHz18.853.57.0–27.6
425 MHz18.853.37.0–27.6

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Die Technology

A2V07H400-04N
Data Sheet

Active

420

851

48

57.3

537

LDMOS

N true 0 PSPA2V07H400-04Nen 4 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1506150914124711984837 PSP 818.9 KB None None documents None 1506150914124711984837 /docs/en/data-sheet/A2V07H400-04N.pdf 818926 /docs/en/data-sheet/A2V07H400-04N.pdf A2V07H400-04N documents N N 2017-09-22 A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V07H400-04N.pdf /docs/en/data-sheet/A2V07H400-04N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Oct 11, 2021 980000996212993340 Data Sheet Y N A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Data Sheet Application Note Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Technical Notes Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 4 B English 98ASA10833D, OM-780-4L Straight Lead 1320204697071704615089 PSP 69.8 KB None None documents None 1320204697071704615089 /docs/en/package-information/98ASA10833D.pdf 69766 /docs/en/package-information/98ASA10833D.pdf SOT1818-4 documents N N 2016-10-31 98ASA10833D /docs/en/package-information/98ASA10833D.pdf /docs/en/package-information/98ASA10833D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASA10833D false 0 A2V07H400-04N downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/A2V07H400-04N.pdf 2017-09-22 1506150914124711984837 PSP 1 Oct 11, 2021 Data Sheet A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2V07H400-04N.pdf English documents 818926 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2V07H400-04N.pdf A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V07H400-04N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N A2V07H400-04N 420-851 MHz, 107 W Avg, 48 V Data Sheet 818.9 KB A2V07H400-04N N 1506150914124711984837 Package Information 1 /docs/en/package-information/98ASA10833D.pdf 2016-10-31 1320204697071704615089 PSP 4 Mar 22, 2016 Package Information 98ASA10833D, OM-780-4L Straight Lead None /docs/en/package-information/98ASA10833D.pdf English documents 69766 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10833D.pdf 98ASA10833D /docs/en/package-information/98ASA10833D.pdf documents 302435339416912908 Package Information N en None D pdf B N N 98ASA10833D 69.8 KB SOT1818-4 N 1320204697071704615089 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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