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Models
A2T09VD250N S-Parameters
716-960 MHz, 65 W Avg, 48 V Airfast® RF Power LDMOS Transistor
The A2T09VD250NR1 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
TO-270WB-6A Package Image
Product Details
Features
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
Part numbers include: A2T09VD250N.
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ(A+B) = 1000 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 920 MHz | 22.5 | 34.8 | 7.5 | –34.4 | –18 |
| 940 MHz | 22.7 | 35.4 | 7.4 | –34.2 | –19 |
| 960 MHz | 22.4 | 35.4 | 7.2 | –34.3 | –12 |
800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ(A+B) = 1000 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 790 MHz | 23.0 | 37.3 | 7.4 | –33.0 | –15 |
| 806 MHz | 23.1 | 37.8 | 7.2 | –33.3 | –19 |
| 821 MHz | 22.8 | 37.0 | 7.0 | –33.8 | –13 |
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