A2V09H525-04N|720-960 MHz, 120 W Avg, 48 V | NXP Semiconductors

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720-960 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2V09H525-04N Active
The A2V09H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Features

  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Tables

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 688 mA, VGSB = 1.1 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
920 MHz18.957.87.5–28.9
940 MHz18.956.77.3–32.4
960 MHz18.754.86.9–34.8

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 0.9 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
758 MHz18.156.27.5–28.2
780 MHz18.154.77.5–29.3
803 MHz17.752.57.2–32.5

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Die Technology

A2V09H525-04N
Data Sheet

Active

720

960

48

58.8

759

LDMOS

N true 0 PSPA2V09H525-04Nen 3 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 Technical Notes Technical Notes t521 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1489197036097717792224 PSP 708.7 KB None None documents None 1489197036097717792224 /docs/en/data-sheet/A2V09H525-04N.pdf 708670 /docs/en/data-sheet/A2V09H525-04N.pdf A2V09H525-04N documents N N 2017-03-10 A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V09H525-04N.pdf /docs/en/data-sheet/A2V09H525-04N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 10, 2017 980000996212993340 Data Sheet Y N A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet Technical Notes Technical Notes 1 2 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices Package Information Package Information 1 3 C English 1423774835794718892944 PSP 72.8 KB None None documents None 1423774835794718892944 /docs/en/package-information/98ASA00506D.pdf 72759 /docs/en/package-information/98ASA00506D.pdf SOT1816-1 documents N N 2016-10-31 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00506D.pdf /docs/en/package-information/98ASA00506D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 15, 2016 302435339416912908 Package Information D N 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins false 0 A2V09H525-04N downloads en true 1 Y PSP Y Y Data Sheet 1 /docs/en/data-sheet/A2V09H525-04N.pdf 2017-03-10 1489197036097717792224 PSP 1 Mar 10, 2017 Data Sheet A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2V09H525-04N.pdf English documents 708670 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2V09H525-04N.pdf A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V09H525-04N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet 708.7 KB A2V09H525-04N N 1489197036097717792224 Package Information 1 /docs/en/package-information/98ASA00506D.pdf 2016-10-31 1423774835794718892944 PSP 3 Feb 15, 2016 Package Information None /docs/en/package-information/98ASA00506D.pdf English documents 72759 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00506D.pdf 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins /docs/en/package-information/98ASA00506D.pdf documents 302435339416912908 Package Information N en None D pdf C N N 98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins 72.8 KB SOT1816-1 N 1423774835794718892944 Technical Notes 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 2 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 true Y Products

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