A2V09H525-04N|720-960 MHz, 120 W Avg, 48 V

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The A2V09H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

See product image

Data Sheet

Product Details

Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

Part numbers include: A2V09H525-04N.

RF Performance Tables

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 688 mA, V_GSB = 1.1 Vdc, P_out = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	18.9	57.8	7.5	–28.9
940 MHz	18.9	56.7	7.3	–32.4
960 MHz	18.7	54.8	6.9	–34.8

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 700 mA, V_GSB = 0.9 Vdc, P_out = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
758 MHz	18.1	56.2	7.5	–28.2
780 MHz	18.1	54.7	7.5	–29.3
803 MHz	17.7	52.5	7.2	–32.5

Buy/Parametrics

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Documentation

Quick reference to our documentation types.

3 documents

^{Data Sheet}
A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet

PDFRev 0Mar 10, 2017708.7 KBA2V09H525-04NEnglish
^{Technical Notes}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins

PDFRev CFeb 15, 201672.8 KBSOT1816-1English

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

^Models
A2V09H525-04N S-Parameters Peaking Class C

S2PRev 0Mar 10, 2017 00:00:0034.5 KBA2V09H525-04N-PEAKING-CLASS-C
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^Models
A2V09H525-04N S-Parameters Peaking Class AB

S2PRev 0Mar 10, 2017 00:00:0034.4 KBA2V09H525-04N-PEAKING-CLASS-AB
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^Models
A2V09H525-04N S-Parameters Carrier

S2PRev 0Mar 10, 2017 00:00:0034.4 KBA2V09H525-04N-CARRIER
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^{Printed Circuit Boards and Schematics}
A2V09H525-04N 900 MHz PCB DXF file

ZIPRev 1Mar 10, 2017 00:00:0073.3 KBA2V09H525-04N-900-PCB
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^{Printed Circuit Boards and Schematics}
A2V09H400-04N 780 MHz PCB DXF file

ZIPRev 0Mar 10, 2017 00:00:0079.3 KBA2V09H525-04N-780-PCB
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720-960 MHz, 120 W Avg., 48 V Airfast^® RF Power LDMOS Transistor