TEA2209T | Active Bridge Rectifier Controller | NXP Semiconductors

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NXP Active Bridge Rectifier Controllers, TEA2206 and TEA2209

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The TEA2209T is a product of a new generation of active bridge rectifier controllers replacing the traditional diode bridge.

Using the TEA2209T with low-ohmic high-voltage external MOSFETs significantly improves the efficiency of the power converter as the typical rectifier diode-forward conduction losses are eliminated. Efficiency can improve up to about 1.4 % at 90 V (AC) mains voltage.

The TEA2209T is designed in a silicon-on insulator (SOI) process.

For additional information and sample availability, contact your local sales office.

Data Sheet

Product Details

Block Diagram

TEA2209T

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Features

Efficiency Features

Forward conduction losses of the diode rectifier bridge are eliminated
Very low IC power consumption (2 mW)

Application Features

Integrated high-voltage level shifters
Directly drives all four rectifier MOSFETs
Very low external part count
Integrated X-capacitor discharge (2 mA)
Self-supplying
Full-wave drive improving total harmonic distortion (THD)
S016 package

Control Features

Disable function for all external power MOSFETs
Undervoltage lockout (UVLO) for high-side and low-side drivers
Drain-source overvoltage protection for all external power MOSFETs
Gate pull-down currents at start-up for all external power MOSFETs

Product Programs

Product Longevity

Participating products are available for a minimum of 10 years. Designated participating products developed for the automotive, telecom and medical segments are available for a minimum of 15 years.