SD 3.0-SDR104 Compliant Integrated Auto-Direction Control Memory Card Voltage Level Translator with EMI Filter and ESD Protection | NXP Semiconductors

SD 3.0-SDR104 Compliant Integrated Auto-Direction Control Memory Card Voltage Level Translator with EMI Filter and ESD Protection

NXP SIM and SD Card Voltage Level Translators

Click over video to play

Features

Key Features

  • Supports up to 208 MHz clock rate
  • SD 3.0 specification-compliant voltage translation to support SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed and Default-Speed modes
  • 1.2 V to 1.8 V host side interface voltage support
  • Feedback channel for clock synchronization
  • 100 mA Low dropout voltage regulator to supply the card-side I/Os
  • Low power consumption by push-pull output stage with break-before-make architecture
  • Automatic enable and disable through VSD
  • Integrated pull-up and pull-down resistors: no external resistors required
  • Integrated EMI filters suppress higher harmonics of digital I/Os
  • Integrated 8 kV ESD protection according to IEC 61000-4-2, level 4 on card side
  • Level shifting buffers keep ESD stress away from the host (zero-clamping concept)
  • 20-ball WLCSP; pitch 0.4 mm

Buy/Parametrics










































































































Documentation

Quick reference to our documentation types.

6 documents

Compact List

Application Note (1)
Brochure (1)
Data Sheet (1)
Fact Sheet (1)
Packing Information (2)

Design Files

Quick reference to our design files types.

2 design files

Engineering Services

2 engineering services

To find additional partner offerings that support this product, visit our Partner Marketplace.

Support

What do you need help with?

Recently viewed products

View or edit your browsing history