MMRF1317H Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
1030
Frequency (Max) (MHz)
1090
Supply Voltage (Typ) (V)
50
ParameterValue
P1dB (Typ) (dBm)
61.1
P1dB (Typ) (W)
1300
Die Technology
LDMOS

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MMRF1317HR5(935318748178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
13192.6

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MMRF1317HR5
(935318748178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MMRF1317HR5
(935318748178)
854233
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MMRF1317HR5
(935318748178)
2025-04-162025-05-26202504007IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about MMRF1317H

These 1300 W RF power transistors, MMRF1317H and MMRF1317HS, are designed for applications operating at frequencies between 1020 and 1100 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and secondary surveillance radars.