MMRF1050H|1050 W Peak over 850-950 MHz, 50 V | NXP Semiconductors

1050 W Peak over 850-950 MHz, 50 V Airfast® RF Power LDMOS Transistor

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Features

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull or quadrature configuration
  • Qualified up to 50 V
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS compliant
  • Land- or sea-based UHF radar

RF Performance Tables

Typical Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
950 Pulse
(100 μsec, 20% Duty Cycle)
1050 Peak 21.3 63.7

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Gps
(dB)
ηD
(%)
950 Pulse
(100 μsec, 20% Duty Cycle)
> 20:1 at all Phase Angles 15 W Peak (3 dB Overdrive) 50 No Device Degradation

Buy/Parametrics

1 result

Include 0 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

P1dB (Typ) (dBm)

P1dB (Typ) (W)

Die Technology

Active

850

950

50

60.2

1050

LDMOS

Documentation

Quick reference to our documentation types.

3 documents

Compact List

Design Files

Quick reference to our design files types.

3 design files

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