MMRF2010N|1030-1090 MHz, 250 W Peak, 50 V | NXP Semiconductors

1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers

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Features

  • Characterized over 1030-1090 MHz
  • On-chip input (50 Ohm) and interstage matching
  • Single ended
  • Integrated ESD protection
  • Low thermal resistance
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHS Compliant
  • Driver PA for high power pulse applications
  • IFF and secondary radar

RF Performance Tables

Typical Wideband Performance

(52 Vdc, TA = 25°C)
Frequency
(MHz)(1)
Signal Type Pout
(W)
Gps
(dB)
2nd Stage Eff.
(%)
1030Pulse
(128 µsec, 10% Duty Cycle)
250 Peak34.161.0
109033.461.9
1030Pulse
(2 msec, 20% Duty Cycle)
250 Peak33.661.5
109032.662.9

Narrowband Performance

(50 Vdc, TA = 25°C)
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
2nd Stage Eff.
(%)
1090(2)Pulse
(128 µsec, 10% Duty Cycle)
250 Peak32.161.4

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test Voltage Result
1090(1)Pulse
(2 msec, 20% Duty Cycle)
> 20:1 at all Phase Angles 0.316 W Peak
(3 dB Overdrive)
52No Device Degradation
1. Measured in 1030-1090 MHz reference circuit.
2. Measured in 1090 MHz narrowband test circuit.

Buy/Parametrics

2 results

Include 0 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

P1dB (Typ) (dBm)

P1dB (Typ) (W)

Die Technology

Active

1030

1090

50

54

250

LDMOS

Active

1030

1090

50

54

250

LDMOS

Documentation

Quick reference to our documentation types.

9 documents

Compact List

Application Note (4)
Data Sheet (1)
Package Information (2)
Supporting Information (1)
Technical Notes (1)

Support

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