MMRF1305H|1.8-2000 MHz, 100 W, 50 V | NXP Semiconductors

1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

  • This page contains information on a product that is not recommended for new designs.

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Features

  • Wide Operating Frequency Range
  • Very Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.

RF Performance Tables

30-512 MHz Broadband

VDD = 50 Vdc

512 MHz Narrowband

VDD = 50 Vdc

Ruggedness, 512 MHz

Buy/Parametrics

2 results

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

P1dB (Typ) (dBm)

P1dB (Typ) (W)

Die Technology

Not Recommended for New Designs

1.8

2000

50

50

100

LDMOS

End of Life

1.8

2000

50

50

100

LDMOS

Documentation

Quick reference to our documentation types.

4 documents

Compact List

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