Product Details

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single-Ended or in a Push-Pull Configuration
Qualified Up to a Maximum of 50 V_DD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
NI-780H-4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
NI-780S-4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13-inch Reel.

RF Performance Table

130, 230 MHz Broadband

Typical Performance: V_DD = 50 Vdc, I_DQ = 100 mA

Signal Type	Pout (W)	f (MHz)	G_ps (dB)	η_D (%)	IRL (dB)
Pulse (100 µsec, 20% Duty Cycle)	300 Peak	230	26.5	74.0	–16
CW	300 Avg.	130	25.0	80.0	–15

Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles
- 300 W CW Output Power
- 300 W Pulse Peak Power, 20% Duty Cycle, 100 µsec
Capable of 300 W CW Operation

Buy/Parametrics

Part Show description	Order	CAD Model	Status	Package Type
MMRF1310H Data Sheet			End of Life	CFM4F
MMRF1310HS Data Sheet			End of Life	CFM4F

Documentation

Quick reference to our documentation types.

5 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2

MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet[MMRF1310H]

PDFJul 24, 2014Rev 0

NI-780S-4L[98ASA10718D]

PDFAug 15, 2016Rev C
98ASA10793D, NI-780H-4L[SOT1827-1]

PDFMar 21, 2016Rev A

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

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1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs

Product Details

Features

RF Performance Table

130, 230 MHz Broadband

Buy/Parametrics

Documentation

Filter by

Application Note (1)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

Data Sheet (1)

MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet[MMRF1310H]

Package Information (2)

NI-780S-4L[98ASA10718D]

98ASA10793D, NI-780H-4L[SOT1827-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Filter by

Application Note (1)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

Data Sheet (1)

MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet[MMRF1310H]

Package Information (2)

NI-780S-4L[98ASA10718D]

98ASA10793D, NI-780H-4L[SOT1827-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

Design Resources

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