A5G23H110N|2300–2400 MHz, 13.8 W Avg, 48 V | NXP Semiconductors

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2300-2400 MHz, 13.8 W Avg., 48 V Airfast® RF Power GaN Amplifier

A5G23H110N
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This 13.8 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

RF Performance Table

2300 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 50 mA, VGSB = –4.7 Vdc, Pout = 13.8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2300 MHz16.356.68.5-29.1
2350 MHz16.156.58.6-30.8
2400 MHz16.256.38.8-32.4
1. All data measured in reference circuit with device soldered to printed circuit board.

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Die Technology

A5G23H110N
Data Sheet

Active

2300

2400

48

49.6

92

GaN

N true 0 PSPA5G23H110Nen 3 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English A5G23H110N 2300–2400 MHz, 13.8 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN amplifier for cellular base stations 1664824154653697403903 PSP 417.9 KB None None documents None 1664824154653697403903 /docs/en/data-sheet/A5G23H110N.pdf 417943 /docs/en/data-sheet/A5G23H110N.pdf A5G23H110N documents N N 2022-10-03 A5G23H110N 2300–2400 MHz, 13.8 W Avg, 48 V Data Sheet /docs/en/data-sheet/A5G23H110N.pdf /docs/en/data-sheet/A5G23H110N.pdf Data Sheet N 980000996212993340 2024-01-17 pdf N en Oct 18, 2023 980000996212993340 Data Sheet Y N A5G23H110N 2300–2400 MHz, 13.8 W Avg, 48 V Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages false 0 A5G23H110N downloads en true 1 Y PSP Y Y Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/A5G23H110N.pdf 2022-10-03 1664824154653697403903 PSP 1 Oct 18, 2023 Data Sheet A5G23H110N 2300–2400 MHz, 13.8 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN amplifier for cellular base stations None /docs/en/data-sheet/A5G23H110N.pdf English documents 417943 None 980000996212993340 2024-01-17 N /docs/en/data-sheet/A5G23H110N.pdf A5G23H110N 2300–2400 MHz, 13.8 W Avg, 48 V Data Sheet /docs/en/data-sheet/A5G23H110N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N A5G23H110N 2300–2400 MHz, 13.8 W Avg, 48 V Data Sheet 417.9 KB A5G23H110N N 1664824154653697403903 true Y Products

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