A5G23H110N Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
2300
Frequency (Max) (MHz)
2400
Supply Voltage (Typ) (V)
48
ParameterValue
Peak Power (Typ) (dBm)
49.6
Peak Power (Typ) (W)
92
Die Technology
GaN

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
A5G23H110NT4(935442486528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
400.0

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
A5G23H110NT4
(935442486528)
No
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
A5G23H110NT4
(935442486528)
854233

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
A5G23H110NT4
(935442486528)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about A5G23H110N

This 13.8 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.