A5G23H110N|2300–2400 MHz, 13.8 W Avg, 48 V | NXP Semiconductors

2300-2400 MHz, 13.8 W Avg., 48 V Airfast® RF Power GaN Amplifier

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

RF Performance Table

2300 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 50 mA, VGSB = –4.7 Vdc, Pout = 13.8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz16.356.68.5-29.1
2350 MHz16.156.58.6-30.8
2400 MHz16.256.38.8-32.4
1. All data measured in reference circuit with device soldered to printed circuit board.

Buy/Parametrics

1 result

Include 0 NRND

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

Die Technology

Active

2300

2400

48

49.6

92

GaN

Documentation

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3 documents

Compact List

Design Files

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4 design files

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