2300 - 2700 MHz | NXP Semiconductors

14 results for selection made for 2300 - 2700 MHz

excluding 11 Not Recommended for New Designs Show All
Part
Frequency (Min) (MHz)
Frequency (Max) (MHz)
Supply Voltage (Typ) (V)
Peak Power (Typ) (dBm)
Peak Power (Typ) (W)
Supply Current (TYP) (mA)
3rd Order Intercept (Typ) (dBm)
Noise Figure (Typ) (dB) @ f (MHz)
Max Avg. Input Power (TX) (Min) (dBm)
Die Technology
A3G26D055N - Airfast RF Power GaN Amplifier, 100-2690 MHz, 8 W Avg., 48 V
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A3I25D080GN - Airfast RF LDMOS Integrated Power Amplifier, 2300-2690 MHz, 8.3 W Avg., 28 V
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A3I25D080N - Airfast RF LDMOS Integrated Power Amplifier, 2300-2690 MHz, 8.3 W Avg., 28 V
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A3I25X050GN - Airfast RF LDMOS Integrated Power Amplifier, 2300-2700 MHz, 5.6 W Avg., 28 V
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A3M40PD012 - Airfast Pre-driver Module, 2300-4200 MHz, 37 dB, 25 dBm.
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A5G23H065N - Airfast RF Power GaN Amplifier, 2300-2400 MHz, 8.8 W Avg., 48 V
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A5G23H110N - Airfast RF Power GaN Amplifier, 2300-2400 MHz, 13.8 W Avg., 48 V
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A5G26H110N - Airfast RF Power GaN Amplifier, 2496-2690 MHz, 15 W Avg., 48 V
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A5G26S004N - Airfast RF Power GaN Transistor, 2300-2690 MHz, 24 dBm Avg., 48 V
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A5G26S008 - Airfast RF Power GaN Transistor, 2300-2690 MHz, 27 dBm Avg., 48 V
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Active
100
2690
48
47.4
55
-
-
-
-
GaN
Active
2300
2690
28
49.3
85
-
-
-
-
LDMOS
Active
2300
2690
28
49.3
85
-
-
-
-
LDMOS
Active
2300
2700
28
47.4
55
-
-
-
-
LDMOS
Active
2300
4200
3.3
-
-
-
-
-
-
GaAs
Active
2300
2400
48
48
63.1
-
-
-
-
GaN
Active
2300
2400
48
49.6
92
-
-
-
-
GaN
Active
2496
2690
48
50.5
112
-
-
-
-
GaN
Active
2300
2690
48
36
4
-
-
-
-
GaN
Active
2300
2690
48
40.3
10.7
-
-
-
-
GaN