BTS6305U|5G Massive MIMO Pre-Driver | NXP Semiconductors

5G Massive MIMO Pre-Driver

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Product Details

Features

  • High saturated output power Po(sat) = 29 dBm
  • High power-gain Gp = 39.5 dB
  • High linearity performance ACLR = -42 dBc
  • Unconditionally stable
  • Fast switching to support TDD systems
  • 5 V single supply, quiescent current 100 mA
  • Small 16-terminal leadless package 3 mm x 3 mm x 0.85 mm
  • ESD protection on all terminals
  • Moisture sensitivity level 1

Buy/Parametrics

2 results

Include 0 NRND

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CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Current (TYP) (mA)

3rd Order Intercept (Typ) (dBm)

Noise Figure (Typ) (dB) @ f (MHz)

Die Technology

Active

2300

4200

122

33

4 @ 3500

SiGe

Active

Documentation

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3 documents

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