The A5M26SG240 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The field-proven LDMOS and GaN power amplifiers are designed for TDD LTE and 5G systems. The module includes an autobias feature that automatically sets the transistor bias upon power up and an integrated sensor that monitors the temperature. Communications to the module can be accomplished via either I²C or SPI.
Part numbers include: A5M26SG240.
Typical LTE performance: Pout = 8.9 W Avg., VDC1 = VDP1 = 5 Vdc, VDC2 = VDP2 = 48 Vdc, 1 × 20 MHz LTE, input signal PAR = 8 dB @ 0.01 % probability on CCDF. (1)
| Carrier Center Frequency | Gain (dB) | ACPR (dBc) | PAE (%) |
|---|---|---|---|
| 2506 MHz | 34.6 | -32.2 | 46.5 |
| 2600 MHz | 35.2 | -32.6 | 47.7 |
| 2680 MHz | 35.5 | -29.7 | 47.0 |
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1 design file
Receive the full breakdown. See the product footprint and more in the eCad file.
