100-2690 MHz, 8 W Avg., 48 V Airfast® RF Power GaN Amplifier

A3G26D055N | 100-2690 MHz, 8 W Avg, 48 V | NXP Semiconductors

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This A3G26D055N 8 W symmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100–2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for low complexity analog or digital linearization systems
Optimized for massive MIMO active antenna systems for 5G base stations
RoHs compliant

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 40 mA, V_GSB = –4.9 Vdc, P_out = 8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2515 MHz	18.0	52.1	8.3	-27.4
2595 MHz	18.2	53.5	8.2	-28.2
2675 MHz	18.0	54.1	8.1	-30.1

1. All data measured in reference circuit with device soldered to printed circuit board.

700 MHz

Typical Class AB Side A (top side) W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 40 mA, P_out = 5.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	P3dB (dBm)	ACPR (dBc)
750 MHz	20.0	41.7	7.0	44.5	-34.4
780 MHz	19.7	41.1	7.0	44.5	-34.3
810 MHz	19.2	40.6	7.0	44.5	-36.6

1. All data measured in reference circuit with device soldered to printed circuit board.

Buy/Parametrics

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N true 0 PSPA3G26D055Nen 3 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 en_US en_US en Data Sheet Data Sheet 1 1

English

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Airfast® RF power GaN amplifier for cellular base stations

1610987100574710723914 PSP

423.3 KB

None

documents

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1610987100574710723914

/docs/en/data-sheet/A3G26D055N.pdf

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A3G26D055N

documents

2021-01-18

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Data Sheet

/docs/en/data-sheet/A3G26D055N.pdf /docs/en/data-sheet/A3G26D055N.pdf

Data Sheet

980000996212993340

2024-01-17

pdf N

Oct 18, 2023

980000996212993340

Data Sheet

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Data Sheet

Application Note Application Note 2 2

English

This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices.

1075398872032723970051 PSP

235.5 KB

None

documents

None

1075398872032723970051

/docs/en/application-note/AN1955.pdf

235468

/docs/en/application-note/AN1955.pdf

AN1955

documents

2016-11-09

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

/docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf

Application Note

645036621402383989

2025-01-28

pdf N

Jul 11, 2024

645036621402383989

Application Note

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

English

I989356375600 PSP

910.7 KB

None

documents

None

I989356375600

/docs/en/application-note/AN1907.pdf

910737

/docs/en/application-note/AN1907.pdf

AN1907

documents

2016-11-09

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

/docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf

Application Note

645036621402383989

2025-01-28

pdf N

May 13, 2009

645036621402383989

Application Note

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

false 0 A3G26D055N downloads en true 1 Y PSP Y Y Application Note

/docs/en/application-note/AN1955.pdf

2016-11-09

1075398872032723970051 PSP 2

Jul 11, 2024

Application Note

This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices.

None

/docs/en/application-note/AN1955.pdf

English

documents

235468

None

645036621402383989

2025-01-28

/docs/en/application-note/AN1955.pdf

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

/docs/en/application-note/AN1955.pdf

documents

645036621402383989

Application Note

None

pdf

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

235.5 KB

AN1955

1075398872032723970051

/docs/en/application-note/AN1907.pdf

2016-11-09

I989356375600 PSP 3

May 13, 2009

Application Note

None

/docs/en/application-note/AN1907.pdf

English

documents

910737

None

645036621402383989

2025-01-28

/docs/en/application-note/AN1907.pdf

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

/docs/en/application-note/AN1907.pdf

documents

645036621402383989

Application Note

None

pdf

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

910.7 KB

AN1907

I989356375600

Data Sheet

/docs/en/data-sheet/A3G26D055N.pdf

2021-01-18

1610987100574710723914 PSP 1

Oct 18, 2023

Data Sheet

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Airfast® RF power GaN amplifier for cellular base stations

None

/docs/en/data-sheet/A3G26D055N.pdf

English

documents

423319

None

980000996212993340

2024-01-17

/docs/en/data-sheet/A3G26D055N.pdf

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Data Sheet

/docs/en/data-sheet/A3G26D055N.pdf

documents

980000996212993340

Data Sheet

None

pdf

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Data Sheet

423.3 KB

A3G26D055N

1610987100574710723914

true Y Products

Documentation

Quick reference to our documentation types.

3 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Data Sheet[A3G26D055N]

PDFOct 18, 2023Rev 3

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100-2690 MHz, 8 W Avg., 48 V Airfast® RF Power GaN Amplifier

Product Details

Features

RF Performance Table

2600 MHz

700 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Data Sheet[A3G26D055N]

Filter by

Application Note (2)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A3G26D055N 100-2690 MHz, 8 W Avg, 48 V Data Sheet[A3G26D055N]

Design Resources

Design Files

Filter by

A3G26D055N Peaking Class C S-Parameters

A3G26D055N Carrier Class AB S-Parameters

A3G26D055N + 2x MRF24G300HS 2400-2500 MHz Design Files

A3G26D055N 1805-1880 MHz Design Files

A3G26D055N 2515-2675 MHz Design Files

A3G26D055N 2110-2170 MHz Design Files

A3G26D055N 100-2500 MHz Design Files

A3G26D055N 925-960 MHz Design Files

Filter by

Filter By

A3G26D055N Peaking Class C S-Parameters

A3G26D055N Carrier Class AB S-Parameters

A3G26D055N + 2x MRF24G300HS 2400-2500 MHz Design Files

A3G26D055N 1805-1880 MHz Design Files

A3G26D055N 2515-2675 MHz Design Files

A3G26D055N 2110-2170 MHz Design Files

A3G26D055N 100-2500 MHz Design Files

A3G26D055N 925-960 MHz Design Files

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100-2690 MHz, 8 W Avg., 48 V Airfast^® RF Power GaN Amplifier