TEA1999TS Product Information|NXP

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TEA1999TS/2Z

Active

12NC: 935363899147

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In Stock:3,000
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TEA1999TS/1H

No Longer Manufactured

12NC: 935334166125

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TEA1999TS/1X

No Longer Manufactured

12NC: 935334166115

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Operating Features

ParameterValue
Minimum SR active time (μs)
1.4
Driver activation voltage (mV)
-470
Driver regulation voltage (mV)
-25
ParameterValue
Driver deactivation voltage (mV)
250
Driver activation delay time (ns)
40

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
TEA1999TS/1H(935334166125)
Yes
Yes
Yes
DREACH SVHC
0.0
TEA1999TS/1X(935334166115)
Yes
Yes
Yes
DREACH SVHC
0.0
TEA1999TS/2H(935363899125)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
13.010268049999999
TEA1999TS/2Z(935363899147)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
13.010268049999999

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)
Lead SolderingLead Free SolderingLead SolderingLead Free Soldering
TEA1999TS/1H
(935334166125)
No
1
1
240
260
TEA1999TS/1X
(935334166115)
No
1
1
240
260
TEA1999TS/2H
(935363899125)
No
1
1
240
260
TEA1999TS/2Z
(935363899147)
No
1
1
240
260

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
TEA1999TS/1H
(935334166125)
854239
TEA1999TS/1X
(935334166115)
854239
TEA1999TS/2H
(935363899125)
854239
TEA1999TS/2Z
(935363899147)
854239

More about TEA1999TS

The TEA1999TS is a member of a new generation of Synchronous Rectifier (SR) controller ICs for switched mode power supplies with adaptive gate drive for maximum efficiency at any load.

The TEA1999TS is a dedicated controller IC for synchronous rectification on the secondary side of flyback converters. It incorporates the sensing stage and driver stage for driving the SR MOSFET, which is rectifying the output of the secondary transformer winding.

The TEA1999TS can generate its own supply voltage for battery charging applications with low output voltage or for applications with high-side rectification.

The TEA1999TS is fabricated in a Silicon-On-Insulator (SOI) process.

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