MMRF1312GS Product Information|NXP

Features


RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V

Package


CFM4: CFM4, ceramic, flange mount package; 4 terminals; 10.16 mm x 32.26 mm x 4.58 mm body

Buy Options

Operating Features

ParameterValue
Frequency (Min) (MHz)
900
Frequency (Max) (MHz)
1215
Supply Voltage (Typ) (V)
52
ParameterValue
P1dB (Typ) (dBm)
60
P1dB (Typ) (W)
1000
Die Technology
LDMOS

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MMRF1312GSR5(935320794178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
8518.25

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
MMRF1312GSR5
(935320794178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MMRF1312GSR5
(935320794178)
854233
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MMRF1312GSR5
(935320794178)
2025-04-162025-05-26202504007IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

More about MMRF1312H

These RF power devices, MMRF1312H, MMRF1312HS and MMRF1312GS, are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L-Band radar applications such as IFF and DME/TACAN.