MMRF1304N Product Information|NXP

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Operating Features

ParameterValue
Frequency (Min) (MHz)
1.8
Frequency (Max) (MHz)
2000
Supply Voltage (Typ) (V)
50
ParameterValue
P1dB (Typ) (dBm)
44
P1dB (Typ) (W)
25
Die Technology
LDMOS

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
MMRF1304NR1(935318138528)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
529.55

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead SolderingLead SolderingLead Free SolderingLead SolderingLead Free Soldering
MMRF1304NR1
(935318138528)
No
3
260
260
40
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
MMRF1304NR1
(935318138528)
854129
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MMRF1304NR1
(935318138528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

More about MMRF1304N

MMRF1304NR1 and MMRF1304GNR1 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications and radar. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.