| Package Version | Package Name | Mount | Terminal Position | Package Style | Dimensions | Termination Count | Material |
|---|---|---|---|---|---|---|---|
| SOT1732-1 | FM2F | flange mount | double | DFM | 6.1 x 9.65 x 2.03 | 2 | plastic |
| Manufacture Code | Reference Codes | Issue Date |
|---|---|---|
| 98ASH98117A | PDIP-F2(JEDEC | 2017-06-11 |
| Part | Description | Quick access |
|---|---|---|
| AFT05MS031N | Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V | View parametrics |
| MW6S010N | Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | View parametrics |
| MMRF1012N | Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V | View parametrics |
| MRFE6VS25N | Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V | View parametrics |
| AFT20S015N | Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V | View parametrics |
| A3T09S100N | Airfast RF Power LDMOS Transistor, 100 W CW over 136 to 941 MHz, 32 V | View parametrics |
| MRFE6S9060N | Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V | View parametrics |
| MMRF1304N | Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V | View parametrics |
| A2T27S020N | Airfast RF Power LDMOS Transistor 400-2700 MHz, 2.5 W Avg., 28 V | View parametrics |
| MMRF1004N | GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28 V | View parametrics |
| MMRF1015N | Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V | View parametrics |
| AFT09MS031N | Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V | View parametrics |
