MRFE6VS25N|25 W CW, 1.8-2000 MHz, 50 V | NXP Semiconductors

1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

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Features

  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

RF Performance Tables

VHF-UHF Performance

VDD = 50 Volts

512 MHz Narrowband, 1030 MHz Narrowband

VDD = 50 Volts

Ruggedness, 1030 MHz

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Documentation

Quick reference to our documentation types.

7 documents

Compact List

Application Note (1)
Brochure (1)
Data Sheet (1)
Package Information (2)
Technical Notes (1)
White Paper (1)

Design Resources

Design Files

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1-5of 13 design files

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