MMRF1304N|1.8-2000 MHz, 25 W, 50 V | NXP Semiconductors

1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

  • This page contains information on a product that is not recommended for new designs.

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Features

  • Wide Operating Frequency Range
  • Ruggedness
  • Capable of very broadband operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

RF Performance Tables

VHF-UHF Performance

VDD = 50 Volts

512 MHz Narrowband, 1030 MHz Narrowband

VDD = 50 Volts

Ruggedness, 1030 MHz

Buy/Parametrics

2 results

Exclude 2 NRND

Order

CAD Model

Status

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

P1dB (Typ) (dBm)

P1dB (Typ) (W)

Die Technology

End of Life

1.8

2000

50

44

25

LDMOS

End of Life

1.8

2000

50

44

25

LDMOS

Documentation

Quick reference to our documentation types.

7 documents

Compact List

Application Note (3)
Data Sheet (1)
Package Information (2)
Technical Notes (1)

Design Files

Quick reference to our design files types.

1 design file

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