Design Files
Receive the full breakdown. See the product footprint and more in the eCad file.
- No Longer Manufactured
- MMRF1015N
1-2000 MHz, 10 W, 28 V Class A/AB RF Power MOSFETs
- This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.
The MMRF1015NR1 and MMRF1015GNR1 are designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
TO-270-2, TO-270G-2 Package Image
Product Details
Features
- Typical Two-Tone Performance @ 960 MHz, VDD = 28 Vdc,
IDQ = 125 mA, Pout = 10 W PEP
- Power Gain: 18 dB
- Drain Efficiency: 32%
- IMD: –37 dBc
- Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- On-Chip RF Feedback for Broadband Stability
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant.
- In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
Part numbers include: MMRF1015GN, MMRF1015N.
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Documentation
Quick reference to our documentation types.
5 documents
-
Package Information
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins
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Package Information
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins
