MC33GD3100B3EK Product Information|NXP

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MC33GD3100B3EK

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12NC: 935444484574

Details

Quantity

Unit Pricing

1 - 25$5.75
26 - 99$5.30
100+$4.86

Order

$5.75 USD
In Stock:539
Order from distributors

Operating Features

ParameterValue
Device Function
HV Isolated IGBT & SiC Single gate driver IC
Logic Level (V)
3.3
Frequency (Max) (kHz)
40
Load Current (IL) [TYP] (A)
15
Number of Channels
1
Protection
desaturation, overcurrent, overtemperature, short-circuit, undervoltage
Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON))
500
ParameterValue
Load Supply Voltage (Min) (V)
-12
Load Supply Voltage (Max) (V)
25
Supply Voltage [min] (V)
5
Supply Voltage [max] (V)
40
SPI [bits]
24
Ambient Operating Temperature (Min to Max) (℃)
-40 to 125
ASIL Certification
up to ASIL D

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF IndicatorREACH SVHCWeight (mg)
MC33GD3100B3EK(935444484574)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
467.3
MC33GD3100B3EKR2(935444484518)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
467.3

Quality

Part/12NCSafe Assure Functional SafetyMoisture Sensitivity Level (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free SolderingLead Free Soldering
MC33GD3100B3EK
(935444484574)
ISO 26262
3
260
40
MC33GD3100B3EKR2
(935444484518)
ISO 26262
3
260
40

Shipping

Part/12NCHarmonized Tariff (US)Disclaimer
MC33GD3100B3EK
(935444484574)
854239
MC33GD3100B3EKR2
(935444484518)
854239

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
MC33GD3100B3EK
(935444484574)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
MC33GD3100B3EKR2
(935444484518)

More about GD3100

The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.

  • Current and temperature sense minimizes IGBT/SiC stress during faults
  • Accurate and configurable under voltage lockout provides protection while ensuring sufficient gate drive voltage headroom
  • Autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of many IGBTs/SiC
  • Self-test, control and protection functions are included for the design of high-reliability systems
More