AFV10700S Product Information|NXP

Features


Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V

Package


CFM4F: CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 20.53 mm x 3.75 mm body

Buy Options

Operating Features

ParameterValue
Frequency (Min) (MHz)
960
Frequency (Max) (MHz)
1215
Supply Voltage (Typ) (V)
50
ParameterValue
P1dB (Typ) (dBm)
58.5
P1dB (Typ) (W)
700
Die Technology
LDMOS

Environmental

Part/12NCPbFreeEU RoHSHalogen FreeRHF Indicator2nd Level InterconnectREACH SVHCWeight (mg)
AFV10700HSR5(935346524178)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6489.824

Quality

Part/12NCSafe Assure Functional SafetyPeak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
Lead Free SolderingLead Free Soldering
AFV10700HSR5
(935346524178)
No
260
40

Shipping

Part/12NCHarmonized Tariff (US)DisclaimerExport Control Classification Number (US)
AFV10700HSR5
(935346524178)
854233
EAR99

Product Change Notice

Part/12NCIssue DateEffective DatePCNTitle
AFV10700HSR5
(935346524178)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products
AFV10700HSR5
(935346524178)
2017-12-202018-01-03201710023INew PQ Label Input for Non-MPQ Shipments

More about AFV10700H

These RF power transistors, AFV10700H, AFV10700HS and AFV10700GS, are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains.