Package Version | Package Name | Mount | Terminal Position | Package Style | Dimensions | Termination Count | Material |
---|---|---|---|---|---|---|---|
SOT1826-1 | CFM4F | flange mount | double | CFM | 9.78 x 20.53 x 3.75 | 4 | ceramic |
Manufacture Code | Reference Codes | Issue Date |
---|---|---|
98ASA10718 | 2017-06-11 |
Name/Description | Type | Modified Date |
---|---|---|
|
Package Information | 2016-08-15 |
Part | Description | Quick access |
---|---|---|
A3G18D510-04S | Airfast RF Power GaN Transistor, 1805-2200 MHz, 56 W Avg., 48 V | View parametrics |
MRFE6VP6300HS | Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V | View parametrics |
MMRF1310HS | Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V | View parametrics |
A3G22H400-04S | Airfast RF Power GaN Transistor, 1805-2200 MHz, 79 W Avg., 48 V | View parametrics |
MMRF1305HS | Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V | View parametrics |
A2T07D160W04S | Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V | View parametrics |
MRF24G300HS | RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | View parametrics |
MRFX600HS | Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V | View parametrics |
AFV10700S | Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V | View parametrics |
MRFE6VP100HS | Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V | View parametrics |
A2G26H281-04S | Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V | View parametrics |
MHTG1200HS | RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | View parametrics |
A3G18H500-04S | Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V | View parametrics |
A2V09H400-04S | Airfast RF Power LDMOS Transistor, 720-960 MHz, 102 W Avg., 48 V | View parametrics |