SOT1826-1: CFM4F

Overview

CFM4F, ceramic, flange mount flat package; 4 terminals; 9.78 mm x 20.53 mm x 3.75 mm body
Package Version Package Name Mount Terminal Position Package Style Dimensions Termination Count Material
SOT1826-1 CFM4F flange mount double CFM 9.78 x 20.53 x 3.75 4 ceramic
Manufacture Code Reference Codes Issue Date
98ASA10718 2017-06-11

Related Documents

Name/Description Type Modified Date
Package Information 2016-08-15
Part Description Quick access
A3G18D510-04S Airfast RF Power GaN Transistor, 1805-2200 MHz, 56 W Avg., 48 V View parametrics
MRFE6VP6300HS Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V View parametrics
MMRF1310HS Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V View parametrics
A3G22H400-04S Airfast RF Power GaN Transistor, 1805-2200 MHz, 79 W Avg., 48 V View parametrics
MMRF1305HS Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V View parametrics
A2T07D160W04S Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V View parametrics
MRF24G300HS RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V View parametrics
AFV10700S Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V View parametrics
MRFX600HS Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V View parametrics
MRFE6VP100HS Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V View parametrics
A2G26H281-04S Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V View parametrics
MHTG1200HS RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V View parametrics
A3G18H500-04S Airfast RF Power LDMOS Transistor, 1805-2200 MHz, 107 W Avg., 48 V View parametrics
A2V09H400-04S Airfast RF Power LDMOS Transistor, 720-960 MHz, 102 W Avg., 48 V View parametrics